Datasheet

NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100 µA to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 12 V
V
CBO
Collector-Base Voltage 20 V
V
EBO
Emitter-Base Voltage 2.5 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
MPS5179 MMBT5179
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN/MPS5179 *MMBT5179
P
D
Total Device Dissipation
Derate above 25
°
C
350
2.8
225
1.8
mW
mW/
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient 357 556
°
C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
C
B
E
TO-92
C
B
E
SOT-23
Mark: 3C
1997 Fairchild Semiconductor Corporation
PN5179
C
E
B
TO-92
MPS5179 / MMBT5179 / PN5179

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