Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsBJTs & IGBTsTransistor

MPSH11/MMBTH11, Rev. B

NPN RF Transistor

This device is designed for common-emitter low noise amplifier

and mixer applications with collector currents in the 100 µA to

10 mA range to 300 MHz, and low frequency drift common-

base VHF oscillator applications with high output levels for

driving FET mixers. Sourced from Process 47.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 25 V

CBO

Collector-Base Voltage 30 V

EBO

Emitter-Base Voltage 3.0 V

Collector Current - Continuous 50 mA

, T

Operating and Storage Junction Temperature Range -55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

MPSH11 *MMBTH11

Total Device Dissipation

Derate above 25

350

2.8

225

1.8

mW/

Thermal Resistance, Junction to Case 125

C/W

Thermal Resistance, Junction to Ambient 357 556

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MPSH11

TO-92

MMBTH11

SOT-23

Mark: 3G

2002 Fairchild Semiconductor Corporation

MPSH11 / MMBTH11

Summary of content (8 pages)

PAGE 1
MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 2.
PAGE 3
(continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 °C V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAG E (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 - 40 °C 0.8 25 캜 0.6 125 °C β = 10 0.4 0.2 0.1 IC 1 10 20 30 - COLLE CTOR CURRENT ( mA) 25 캜 0.6 125 °C 0.4 0.2 0.01 P D - POWER DISSIPATION (mW) I CBO - COLLECTOR CURRENT (nA) 10 VCB = 30V 1 0.
PAGE 4
(continued) Common Emitter Y Parameters Input Admittance vs Collector Current 14 V CE = 15V f = 45 MHz 12 10 8 g ie 6 b ie 4 2 0 0 4 8 12 16 I C - COLLECTOR CURRENT (mA) 20 Y ie - INPUT ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) Input Admittance vs Collector Current 24 V CE = 10V f = 200 MHz 20 g ie 16 12 b ie 8 4 0 0 2 4 6 8 I C - COLLECTOR CURRENT (mA) 20 16 12 g ie 0 b ie 0 4 8 12 16 VCE - COLLECTOR VOLTAGE 20 Forward Transfer Admittance vs Collector Current 500 V C
PAGE 5
(continued) I C = 7.0 mA f = 45 MHz 120 g fe 100 80 -b fe 60 40 20 0 0 4 8 12 16 V CE - COLLECTOR VOLTAGE (V) 20 0.28 V CE = 15V f = 45 MHz 0.24 -b re 0.2 0.16 0.12 0.08 0.04 0 -g re 0 4 8 12 16 I C - COLLECTOR CURRENT (mA) 20 Reverse Transfer Admittance vs Collector Voltage 0.4 I C = 7.0 mA f = 45 MHz 0.36 0.32 0.28 0.24 -b re 0.2 0.16 0.12 0.08 0.04 0 -g re 0 2 4 6 8 10 12 14 16 V CE - COLLECTOR VOLTAGE (V) 18 20 Forward Transfer Admittance vs Frequency 140 V CE = 15V I C = 7.
PAGE 6
(continued) 1000 b oe goe 100 10 V CE = 15V f = 45 MHz 1 0 4 8 12 16 20 I C - COLLECTOR CURRENT (mA) 24 Output Admittance vs Collector Voltage 10000 I C = 7.0 mA f = 45 MHz 1000 b oe goe 100 10 0 4 8 12 16 20 VCE - COLLECTOR VOLTAGE (V) 24 Yoe - OUTPUT ADMITTANCE (mmhos) Output Admittance vs Collector Current Yoe - OUTPUT ADMITTANCE (mmhos) (continued) Output Admittance vs Collector Current 5 V CE = 10V f = 200 MHz 2 35 0.5 goe 0.2 0.
PAGE 7
(continued) Test Circuits VCC = 12 V 270 Ω 1000 pF 1000 pF 200 mHz Output into 50Ω L2 RL RS 100 pF 200 mHz Input 0.8-10 pF L1 1000 pF Ω 2.2 KΩ 1000 pF 390 Ω L1 - Ohmite Z-235 RFC L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side VBB FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit MPSH11/MMBTH11, Rev.
PAGE 8
(continued) Test Circuits (continued) T1 50 Ω Output 4.0-30 pF 0.002 µF 2KΩ Ω 50 Ω Input MPSH11 / MMBTH11 NPN RF Transistor Ω 2.2 KΩ 1/2 W 1000 pF 1000 pF 1000 pF 390 Ω 1/2 W 270 Ω 1/2 W R.F. Beads VCC = 12 V T1 - Q3 Toroid 4:1 ratio 8 turns Pri. 2 turns Sec. } No. 22 wire VAGC FIGURE 2: 45 MHz Power Gain Circuit 200 mHz Output into 50Ω T1 300 pF RFin 1.1 pF 2.