Datasheet
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.2 3
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100 %.
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
Emitter
V
F
Input Forward Voltage I
F
= 10 mA 1.15 1.5 V
I
R
Reverse Leakage Current V
R
= 6.0 V 0.001 100 µA
C
IN
Input Capacitance 18 pF
Detector
I
CEO1
I
CEO2
Collector-Emitter Dark Current V
CE
= 10 V, T
A
= 25°C
V
CE
= 10 V, T
A
= 100°C
1.0
1.0
50 nA
µA
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 100 µA 30 100 V
BV
ECO
Emitter-Collector Breakdown
Voltage
I
E
= 100 µA 7.0 10 V
C
CE
Collector-Emitter Capacitance f = 1.0 MHz, V
CE
= 0 7.0 pF
Coupled
CTR Collector-Output Current
(4)
MOC211M
MOC212M
MOC213M
I
F
= 10 mA, V
CE
= 10 V
20
50
100
%
V
ISO
Isolation Surge Voltage
(1)(2)(3)
f = 60 Hz AC Peak, t = 1 minute 2500 Vac(rms)
R
ISO
Isolation Resistance
(2)
V = 500 V 10
11
Ω
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
= 2.0 mA, I
F
= 10 mA 0.4 V
C
ISO
Isolation Capacitance
(2)
V = 0 V, f = 1 MHz 0.2 pF
t
on
Turn-On Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
7.5 µs
t
off
Turn-Off Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
5.7 µs
t
r
Rise Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
3.2 µs
t
f
Fall Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
4.7 µs