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MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers

MOC216M, MOC217M Rev. 1.0.2

April 2013

MOC216M, MOC217M

Small Outline Surface Mount Phototransistor

Optocouplers

Features

■

U.L. Recognized (File #E90700, Volume 2)

■

VDE Recognized (File #136616)

(add option “V” for VDE approval, i.e, MOC205VM)

■

Convenient Plastic SOIC-8 Surface Mountable

Package Style

■

Low LED Input Current Required for Easier Logic

Interfacing

■

Standard SOIC-8 Footprint, with 0.050" Lead Spacing

■

High Input-Output Isolation of 2500 V

AC(rms)

Guaranteed

Applications

■

Low-power Logic Circuits

■

Interfacing and Coupling Systems of Different

Potentials and Impedances

■

Telecommunications Equipment

■

Portable Electronics

Description

These devices consist of a gallium arsenide infrared

emitting diode optically coupled to a monolithic silicon

phototransistor detector, in a surface mountable, small

outline, plastic package. They are ideally suited for high

density applications, and eliminate the need for through-

the-board mounting.

Marking Information

■

MOC216M = 216

■

MOC217M = 217

Schematic Package Outline

BASE

N/CANODE

CATHODE

EMITTER

COLLECTORN/C

N/C

Figure 1. Schematic

Figure 2. Package Outline

Summary of content (10 pages)

PAGE 1
MOC216M, MOC217M Small Outline Surface Mount Phototransistor Optocouplers Features Description ■ U.L. Recognized (File #E90700, Volume 2) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughthe-board mounting.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
PAGE 3
Symbol Characteristic Test Conditions Min. Typ.* Max. Unit Emitter VF Forward Voltage IF = 1.0 mA 1.07 1.3 V IR Reverse Leakage Current VR = 6.0 V 0.001 100 µA C Capacitance 18 pF Detector ICEO Collector-Emitter Dark Current VCE = 5.0 V, TA = 25°C 1.0 BVCEO Collector-Emitter Breakdown Voltage IC = 100 µA 30 BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7.0 Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 Output Collector Current(4) MOC216M MOC217M IF = 1.
PAGE 4
1.8 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1.7 VF – FORWARD VOLTAGE (V) 1.6 1.5 1.4 TA = –55°C 1.3 1.2 TA = 25°C 1.1 TA = 100°C 1.0 1 10 100 VCE = 5 V NORMALIZED TO IF = 10 mA 1 0.1 IF – LED FORWARD CURRENT (mA) 0.01 Figure 3. LED Forward Voltage vs. Forward Current 0.1 1 10 100 IF – LED INPUT CURRENT (mA) Figure 4. Output Curent vs. Input Current 1.6 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 NORMALIZED TO TA = 25°C 0.
PAGE 5
1.0 1.6 1.4 VCC = 10 V IC = 2 mA RL = 100 Ω Normalized to: toff at RBE = Open 0.9 IF = 10 mA 0.8 1.2 NORMALIZED CTR NORMALIZED toff 0.7 1.0 0.8 0.6 0.6 0.5 IF = 5 mA IF = 20 mA 0.4 0.3 0.4 0.2 0.2 VCE = 0.3 V, TA = 25°C Normalized to: CTR at RBE = Open 0.1 0.0 0.0 0.01 0.1 1 10 100 10 100 RBE – BASE RESISTANCE (MΩ) 1000 RBE – BASE RESISTANCE (kΩ) Figure 9. Normalized toff vs. RBE Figure 10. CTR vs. RBE (Saturated) 1.0 0.9 0.8 IF = 10 mA NORMALIZED CTR 0.7 0.
PAGE 6
8-pin SOIC Surface Mount 8 0.164 (4.16) 0.144 (3.66) SEATING PLANE 1 0.202 (5.13) 0.182 (4.63) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Typ. Lead Coplanarity: 0.004 (0.10) MAX Recommended Pad Layout 0.024 (0.61) 0.060 (1.52) 0.275 (6.99) 0.155 (3.94) 0.050 (1.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components.
PAGE 7
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers Ordering Information Option Order Entry Identifier V V R2 R2 R2V R2V Description VDE 0884 Tape and Reel (2500 units per reel) VDE 0884, Tape and Reel (2500 units per reel) Marking Information 1 215 V X YY S 3 4 2 6 5 Definitions ©2005 Fairchild Semiconductor Corporation MOC216M, MOC217M Rev. 1.0.
PAGE 8
.0 ± 0.10 2.0 ± 0.05 3.50 ± 0.20 0.30 MAX Ø1.5 MIN 1.75 ± 0.10 4.0 ± 0.10 5.5 ± 0.05 8.3 ± 0.10 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 12.0 ± 0.3 Ø1.5 ± 0.1 User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOC216M, MOC217M Rev. 1.0.2 www.fairchildsemi.
PAGE 9
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max.
PAGE 10
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers ©2005 Fairchild Semiconductor Corporation MOC216M, MOC217M Rev. 1.0.2 www.fairchildsemi.