Datasheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC216M, MOC217M Rev. 1.0.2 3
MOC216M, MOC217M — Small Outline Surface Mount Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1 and 2 are common and pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
Symbol Characteristic Test Conditions Min. Typ.* Max. Unit
Emitter
V
F
Forward Voltage I
F
= 1.0 mA 1.07 1.3 V
I
R
Reverse Leakage Current V
R
= 6.0 V 0.001 100 µA
C Capacitance 18 pF
Detector
I
CEO
Collector-Emitter Dark Current V
CE
= 5.0 V, T
A
= 25°C 1.0 50 nA
V
CE
= 5.0 V, T
A
= 100°C 1.0 µA
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 100 µA 30 100 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100 µA 7.0 10 V
C
CE
Collector-Emitter Capacitance f = 1.0 MHz, V
CE
= 0 7.0 pF
Coupled
CTR Output Collector Current
(4)
MOC216M
MOC217M
I
F
= 1.0 mA, V
CE
= 5.0 V
50
100
%
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 100 µA, I
F
= 1.0 mA 0.4 V
t
on
Turn-On Time I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100 Ω , (Fig. 12)
4.0 µs
t
off
Turn-Off Time I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100 Ω , (Fig. 12)
4.0 µs
t
r
Rise Time I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100 Ω , (Fig. 12)
3.0 µs
t
f
Fall Time I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100 Ω , (Fig. 12)
3.0 µs
V
ISO
Input-Output Isolation Voltage
(1)(2)(3)
f = 60 Hz, t = 1.0 minute 2500 Vac(rms)
R
ISO
Isolation Resistance
(2)
V
I-O
= 500 V 10
11
Ω
C
ISO
Isolation Capacitance
(2)
V
I-O
= 0, f = 1.0 MHz 0.2 pF