Datasheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC303XM, MOC304XM Rev. 1.0.7 3
MOC303XM, MOC304XM — 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (250/400 Volt Peak)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified)
Individual Component Characteristics
Transfer Characteristics
Zero Crossing Characteristics
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended
operating I
F
lies between max I
FT
(15mA for MOC3031M & MOC3041M, 10mA for MOC3032M & MOC3042M,
5mA for MOC3033M & MOC3043M) and absolute max I
F
(60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
Symbol Parameters Test Conditions Device Min. Typ. Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 30mA All 1.25 1.5 V
I
R
Reverse Leakage Current V
R
= 6V All 0.01 100 µA
DETECTOR
I
DRM1
Peak Blocking Current,
Either Direction
Rated V
DRM
, I
F
= 0
(2)
All 100 nA
V
TM
Peak On-State Voltage,
Either Direction
I
TM
= 100mA peak, I
F
= 0 All 1.8 3 V
dv/dt Critical Rate of Rise of
Off-State Voltage
I
F
= 0 (Figure 9)
(4)
All 1000 V/µs
Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Units
I
FT
LED Trigger Current Main Terminal
Voltage = 3V
(3)
MOC3031M/
MOC3041M
15 mA
MOC3032M/
MOC3042M
10
MOC3033M/
MOC3043M
5
I
H
Holding Current,
Either Direction
All 400 µA
Symbol Characteristics Test Conditions Device Min. Typ. Max. Units
V
IH
Inhibit Voltage I
F
= rated I
FT
, MT1-MT2
voltage above which device
will not trigger
off-state
All 20 V
I
DRM2
Leakage in Inhibited
State
I
F
= rated I
FT
, rated V
DRM
off-state
All 2 mA