Datasheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.0.4 3
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler (600 Volt Peak)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified)
Individual Component Characteristics
Transfer Characteristics
Zero Crossing Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended operating
I
F
lies between max I
FT
(15mA for MOC3061M, 10mA for MOC3062M & MOC3162M, 5mA for MOC3063M &
MOC3163M) and absolute max I
F
(60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
Symbol Parameters Test Conditions Device Min. Typ.* Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 30mA All 1.3 1.5 V
I
R
Reverse Leakage Current V
R
= 6V All 0.005 100 µA
DETECTOR
I
DRM1
Peak Blocking Current,
Either Direction
V
DRM
= 600V, I
F
= 0
(2)
MOC316XM 10 100
nA
MOC306XM 10 500
dv/dt Critical Rate of Rise of
Off-State Voltage
I
F
= 0 (Figure 9)
(3)
MOC306XM 600 1500
V/µs
MOC316XM 1000
Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Units
I
FT
LED Trigger Current
(rated I
FT
)
Main Terminal
Voltage = 3V
(3)
MOC3061M 15 mA
MOC3062M/
MOC3162M
10
MOC3063M/
MOC3163M
5
V
TM
Peak On-State Voltage,
Either Direction
I
TM
= 100 mA peak,
I
F
= rated I
FT
All 1.8 3 V
I
H
Holding Current,
Either Direction
All 500 µA
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
V
INH
Inhibit Voltage (MT1-MT2
voltage above which device
will not trigger)
I
F
= Rated I
FT
MOC3061M/2M/3M 12 20 V
MOC3162M/3M 12 15
I
DRM2
Leakage in Inhibited State I
F
= Rated I
FT
,
V
DRM
= 600V,
off state
Al 2 mA
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
V
ISO
Isolation Voltage f = 60 Hz, t = 1 sec All 7500 V