Datasheet
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3 3
MOC3081M, MOC3082M, MOC3083M — 6-Pin Zero-Cross Optoisolators Triac Driver Output (800 Volt Peak)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified)
Individual Component Characteristics
Transfer Characteristics
Zero Crossing Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended
operating I
F
lies between max I
FT
(15mA for MOC3081M, 10mA for MOC3082M, 5mA for MOC3083M) and
absolute max I
F
(60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
5. Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.
Symbol Parameters Test Conditions Min. Typ.* Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 30mA 1.3 1.5 V
I
R
Reverse Leakage Current V
R
= 6V 0.005 100 µA
DETECTOR
I
DRM1
Peak Blocking Current,
Either Direction
V
DRM
= 800V, I
F
= 0
(2)
10 500 nA
dv/dt Critical Rate of Rise of
Off-State Voltage
I
F
= 0 (Figure 9)
(4)
600 1500 V/µs
Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Units
I
FT
LED Trigger Current Main Terminal
Voltage = 3V
(3)
MOC3081M 15 mA
MOC3082M 10
MOC3083M 5
V
TM
Peak On-State Voltage,
Either Direction
I
TM
= 100mA peak,
I
F
= rated I
FT
All 1.8 3 V
I
H
Holding Current, Either
Direction
All 500 µA
Symbol Characteristics Test Conditions Min. Typ.* Max. Units
V
INH
Inhibit Voltage (MT1–MT2 voltage
above which device will not trigger)
I
F
= Rated I
FT
12 20 V
I
DRM2
Leakage in Inhibited State I
F
= Rated I
FT
, V
DRM
= 800V,
off state
2 mA
Symbol Characteristics Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage
(5)
f = 60Hz, t = 1 sec. 7500 Vac(pk)