Datasheet
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD211M Rev. 1.0.2 3
MOCD211M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
*Typical values at T
A
= 25°C
Notes:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
Emitter
V
F
Input Forward Voltage I
F
= 10 mA
1.15 1.5 V
I
R
Reverse Leakage Current V
R
= 6.0 V
0.001 100 µA
C
Capacitance
18 pF
Detector
I
CEO1
Collector-Emitter Dark Current V
CE
= 10 V, T
A
= 25°C
1.0 50 nA
I
CEO2
V
CE
= 10 V, T
A
= 100°C
1.0 µA
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 100 µA
30 100 V
BV
ECO
Emitter-Collector Breakdown
Voltage
I
E
= 100 µA
7.0 10 V
C
CE
Collector-Emitter Capacitance f = 1.0 MHz, V
CE
= 0 V
7.0 pF
Coupled
CTR
Current Transfer Ratio
(4)
I
F
= 10 mA, V
CE
= 10 V
20 %
V
CE (sat)
Collector-Emitter Saturation
Voltage
I
C
= 2.0 mA, I
F
= 10 mA
0.4 V
t
on
Turn-On Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
7.5 µs
t
off
Turn-Off Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
5.7 µs
t
r
Rise Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
3.2 µs
t
f
Fall Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
4.7 µs
V
ISO
Isolation Surge Voltage
(1)(2)(3)
f = 60 Hz, t = 1 minimum
2500 Vac(rms)
R
ISO
Isolation Resistance
(2)
V
I-O
= 500 V
10
11
Ω
C
ISO
Isolation Capacitance
(2)
V
I-O
= 0 V, f = 1 MHz
0.2 pF