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MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

MOCD213M Rev. 1.0.2

April 2013

MOCD213M

Dual-channel Phototransistor Small Outline

Surface Mount Optocouplers

Features

■

U.L. Recognized (File #E90700, Volume 2)

■

VDE Recognized (File #136616) (add option “V” for

VDE approval, i.e, MOCD213VM)

■

Dual-channel Coupler

■

Convenient Plastic SOIC-8 Surface Mountable

Package Style

■

Minimum Current Transfer Ratio 100% with Input

Current of 10 mA

■

Minimum BV

CEO

of 70 V Guaranteed

■

Standard SOIC-8 Footprint, with 0.050" Lead Spacing

■

High Input-Output Isolation of 2500 V

AC(rms)

Guaranteed

Applications

■

Feedback Control Circuits

■

Interfacing and Coupling Systems of Different

Potentials and Impedances

■

General Purpose Switching Circuits

■

Monitor and Detection Circuits

Description

The MOCD213M device consists of two gallium arsenide

infrared emitting diodes optically coupled to two mono-

lithic silicon phototransistor detectors, in a surface

mountable, small outline plastic package. It is ideally

suited for high density applications and eliminates the

need for through-the-board mounting.

Schematic Package Outline

EMITTER 1

COLLECTOR 1

ANODE 1

CATHODE 1

EMITTER 2

COLLECTOR 2

ANODE 2

CATHODE 2

Figure 1. Schematic

Figure 2. Package Outline

Summary of content (10 pages)

PAGE 1
MOCD213M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features Description ■ U.L. Recognized (File #E90700, Volume 2) The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified.
PAGE 3
TA = 25°C unless otherwise specified. Symbol Parameter Test Conditions Min. Typ.* Max. Unit Emitter VF Input Forward Voltage IF = 30 mA 1.25 1.55 V IR Reverse Leakage Current VR = 6.0 V 0.001 100 µA C Capacitance 18 pF Detector ICEO1 Collector-Emitter Dark Current ICEO2 VCE = 10 V, TA = 25°C 1.0 VCE = 10 V, TA = 100°C 1.0 50 µA nA BVCEO Collector-Emitter Breakdown Voltage IC = 100 µA 70 120 V BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7.0 7.
PAGE 4
1.8 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 VF – FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 TA = -55°C 1.3 1.2 TA = 25°C 1.1 TA = 100°C 1.0 1 10 100 VCE = 5 V NORMALIZED TO IF = 10 mA 1 0.1 IF - LED FORWARD CURRENT (mA) 0.01 Figure 3. LED Forward Voltage vs. Forward Current 0.1 1 10 100 IF - LED INPUT CURRENT (mA) Figure 4. Output Curent vs. Input Current 1.
PAGE 5
WAVEFORMS VCC = 10 V INPUT PULSE IF IC INPUT RL 10% OUTPUT OUTPUT PULSE 90% tr Adjust IF to produce IC = 2 mA ton tf toff Figure 8. Switching Time Test Circuit and Waveform ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.
PAGE 6
8-pin SOIC Surface Mount 8 0.164 (4.16) 0.144 (3.66) SEATING PLANE 1 0.202 (5.13) 0.182 (4.63) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Typ. Lead Coplanarity: 0.004 (0.10) MAX Recommended Pad Layout 0.024 (0.61) 0.060 (1.52) 0.275 (6.99) 0.155 (3.94) 0.050 (1.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components.
PAGE 7
MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Ordering Information Option Order Entry Identifier V V R2 R2 R2V R2V Description VDE 0884 Tape and Reel (2500 units per reel) VDE 0884, Tape and Reel (2500 units per reel) Marking Information 1 D213 V X YY S 3 4 2 6 5 Definitions ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.
PAGE 8
.0 ± 0.10 2.0 ± 0.05 3.50 ± 0.20 0.30 MAX Ø1.5 MIN 1.75 ± 0.10 4.0 ± 0.10 5.5 ± 0.05 8.3 ± 0.10 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 12.0 ± 0.3 Ø1.5 ± 0.1 User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.
PAGE 9
MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max.
PAGE 10
MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.