Datasheet

MTD3055V
MTD3055V Rev. A
MTD3055V*
N-Channel Enhancement Mode Field Effect Transistor
Features
 12 A, 60 V. R
DS(ON)
= 0.15 Ω @ V
GS
= 10 V
 Low gate charge.
 Fast switching speed.
 High performance technology for low R
DS(ON)
.
1999 Fairchild Semiconductor Corporation
August 1999
*
6
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General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.