Datasheet

MTD3055VL
MTD3055VL Rev. A
MTD3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
1999 Fairchild Semiconductor Corporation
August 1999
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General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
12 A, 60 V. R
DS(ON)
= 0.18 @ V
GS
= 5 V
Critical DC electrical parameters specified at elevated
temperature.
Low drive requirements allowing operation directly from
logic drivers. Vgs(th) < 2 V.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
 175°C maximum junction temperature rating.

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