Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsNDB6020P, MOSFET

September 1997

NDP6020P / NDB6020P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

________________________________________________________________________________

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter NDP6020P NDB6020P Units

DSS

Drain-Source Voltage -20 V

GSS

Gate-Source Voltage - Continuous ±8 V

Drain Current - Continuous -24 A

- Pulsed -70

Total Power Dissipation @ T

= 25°C

60 W

Derate above 25°C 0.4 W/°C

STG

Operating and Storage Temperature Range -65 to 175 °C

NDP6020P Rev.C1

-24 A, -20 V. R

DS(ON)

= 0.05 Ω @ V

= -4.5 V.

DS(ON)

= 0.07Ω @ V

= -2.7 V.

DS(ON)

= 0.075 Ω @ V

= -2.5 V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through

hole and surface mount applications.

These logic level P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process has been especially tailored to minimize on-state

resistance, provide superior switching performance, and

withstand high energy pulses in the avalanche and

commutation modes. These devices are particularly suited for

low voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery powered

circuits where fast switching, low in-line power loss, and

resistance to transients are needed.

Summary of content (6 pages)

PAGE 1
September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS(ON) = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
PAGE 2
Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V TJ = 55°C -1 µA -10 µA IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA -1 V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VG
PAGE 3
Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuous Drain-Source Diode Forward Current -24 A ISM Maximum Pulsed Drain-Source Diode Forward Current -80 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -12 A (Note 1) -1.1 trr Reverse Recovery Time 60 ns Irr Reverse Recovery Current VGS = 0 V, IF = -24 A, dIF/dt = 100 A/µs -1.7 A -1.
PAGE 4
Typical Electrical Characteristics -50 V GS = -5.0V 1.8 -4.5 V GS = -2.5 V R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE CURRENT (A) -4.0 -40 -3.5 -30 -3.0 -2.7 -20 -2.5 -10 I D -2.0 0 0 -1 -2 -3 -4 , DRAIN-SOURCE VOLTAGE (V) V DS 1.6 -3.0 1.4 -4.0 -4.5 -5.0 1 0.8 -5 0 -10 -20 -30 I D , DRAIN CURRENT (A) R DS(on) , NORMALIZED V G S =-4.5V 1.4 1.2 1 0.8 DRAIN-SOURCE ON-RESISTANCE 1.6 0.6 -50 VGS = -4.5V TJ = 125°C 1.5 25°C 1 -55°C 0.
PAGE 5
Typical Electrical Characteristics (continued) 20 10 ID = -250µA VGS = 0V 4 1.06 -I , REVERSE DRAIN CURRENT (A) 1.04 1.02 1 0.98 T J = 125°C 1 25°C 0 .1 -55°C 0 .0 1 0 .0 0 1 S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 0.96 -50 -25 0 25 50 75 100 125 150 175 0 .0 0 0 1 0 T J , JUNCTION TEMPERATURE (°C) Figure 7. Breakdown Voltage Variation with Temperature.
PAGE 6
30 100 V DS = - 5V TJ = -55°C 18 25°C 125°C 12 6 30 0 -5 -10 -15 -20 -25 1m 10m 100 10 DC 5 s s ms VGS = -4.5V SINGLE PULSE R θJC = 2.5 °C/W AT = 25°C C 3 2 0 1µs IT LIM N) S(O D R 60 24 -ID , DRAIN CURRENT (A) g FS, TRANSCONDUCTANCE (SIEMENS) Typical Electrical Characteristics (continued) 1 1 2 I D , DRAIN CURRENT (A) 5 10 20 30 - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 14. Maximum Safe Operating Area. Figure 13.