Datasheet

May 2002
2002 Fairchild Semiconductor Corporation
NDC7003P Rev B(W)
NDC7003P
Dual P-Channel PowerTrench



MOSFET
General Description
These dual P-Channel Enhancement Mode Power Field
Effect Transistors are produced using Fairchild’s
proprietary Trench Technology. This very high density
process has been designed to minimize on-state
resistance, provide rugged and reliable performance
and fast switching. This product is particularly suited to
low voltage applications requiring a low current high
side switch.
Features
• –0.34A, –60 V. R
DS(ON)
= 5 Ω @ V
GS
= –10 V
R
DS(ON)
= 7 Ω @ V
GS
= –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for low R
DS(ON)
• SuperSOT
TM
-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
3
2
1
4
5
6
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –60 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) –0.34 A
– Pulsed –1
Power Dissipation for Single Operation (Note 1a) 0.96
(Note 1b)
0.9
P
D
(Note 1c)
0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 130
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 60
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.03P NDC7003P 7’’ 8mm 3000 units
NDC7003P