Datasheet
September 1996
NDS356AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
________________________________________________________________________________
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter NDS356AP Units
V
DSS
Drain-Source Voltage -30 V
V
GSS
Gate-Source Voltage - Continuous ±20 V
I
D
Maximum Drain Current - Continuous (Note 1a) ±1.1 A
- Pulsed ±10
P
D
Maximum Power Dissipation (Note 1a) 0.5 W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
NDS356AP Rev.C1
SuperSOT
TM
-3 P-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss are
needed in a very small outline surface mount package.
-1.1 A, -30 V, R
DS(ON)
= 0.3 Ω @ V
GS
=-4.5 V
R
DS(ON)
= 0.2 Ω @ V
GS
=-10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOT
TM
-3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
D
S
G
© 1997 Fairchild Semiconductor Corporation