Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsNDS8425, MOSFET

January 2001

2001 Fairchild Semiconductor International

NDS8425 Rev D (W)

NDS8425

Single N-Channel, 2.5V Specified PowerTrench







MOSFET

General Description

This N-Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor’s advanced Power

Trench process that has been especially tailored to

minimize on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices have been designed to offer exceptional

power dissipation in a very small footprint package.

Applications

• DC/DC converter

• Load switch

Features

• 7.4 A, 20 V. R

DS(ON)

= 0.022 Ω @ V

= 4.5 V

DS(ON)

= 0.028 Ω @ V

= 2.7 V

• Fast switching speed

• Low gate charge (11nC typical)

• High performance trench technology for extremely low

DS(ON)

• High power and current handling capability in a widely

used surface mount package

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

±8

Drain Current – Continuous (Note 1a)

±7.4

– Pulsed

±20

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

NDS8425 NDS8425 13’’ 12mm 2500 units

NDS8425

Summary of content (5 pages)

PAGE 1
NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • 7.4 A, 20 V.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics 20 BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250µA ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSSF IGSSR V 14 mV/°C Gate–Body Leakage, Forward VGS = 0 V VDS = 16 V, VDS = 16 V,VGS = 0 V, TJ=55°C VGS = 8 V, VDS = 0 V 1 10 100 nA Gate–Body Leakage, Reverse VGS = –8 V –100 nA 1.
PAGE 3
NDS8425 Typical Characteristics 30 2.5 VGS = 4.5V 4.0V 3.5V 3.0V 25 2.5V 2 VGS = 2.0V 20 2.0V 15 1.5 2.5V 3.0V 10 3.5V 4.0V 1 4.5 5 1.5V 0 0.5 0 0.5 1 1.5 2 2.5 3 0 5 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 20 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.8 1.6 15 ID, DRAIN CURRENT (A) ID = 7.4A VGS = 4.5V ID = 7.4 A 0.07 0.06 1.4 0.05 1.2 0.04 o TA = 125 C 1.0 0.03 0.8 0.02 o TA = 25 C 0.6 0.
PAGE 4
NDS8425 Typical Characteristics (continued) 5 1500 ID = 7.4A 4 VDS = 5V f = 1MHz VGS = 0 V CISS 10V 1200 15V 3 900 2 600 1 300 0 0 COSS CRSS 0 2 4 6 8 10 12 0.0 4.0 Qg, GATE CHARGE (nC) 8.0 12.0 16.0 20.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 RDS(ON) LIMIT 100µs 1ms 10 SINGLE PULSE 10ms 100ms 1s 10s DC 1 o RθJA = 125 C/W 40 o TA = 25 C 30 0.1 20 VGS = 4.5V SINGLE PULSE 0.
PAGE 5
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