Datasheet

May 2002
2002 Fairchild Semiconductor Corporation
NDS9407 Rev B1(W)
NDS9407
60V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
Power management
Load switch
Battery protection
Features
–3.0 A, –60 V. R
DS(ON)
= 150 m @ V
GS
= –10 V
R
DS(ON)
= 240 m @ V
GS
= –4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –60 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) –3.0 A
Pulsed –12
Maximum Power Dissipation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 50
°C/W
(Note 1c)
125
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
NDS9407 NDS9407 13’’ 12mm 2500 units
NDS9407

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