Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsNDS9948, MOSFET

2010 Fairchild Semiconductor Corporation

NDS9948 Rev B1(W)

NDS9948

Dual 60V P-Channel PowerTrench







MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –2.3 A, –60 V R

DS(ON)

= 250 mΩ @ V

= –10 V

DS(ON)

= 500 mΩ @ V

= –4.5 V

• Low gate charge (9nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –60 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) –2.3 A

– Pulsed –10

Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

1.0

(Note 1c)

0.9

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 78

°C/W

(Note 1c)

135

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

NDS9948 NDS9948 13’’ 12mm 2500 units

NDS9948

January 2010

Summary of content (6 pages)

PAGE 1
NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). • –2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 15 –10 mJ Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD=–54 V A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to25°C –60 V –52 mV/°C –2 –25 100 µA Gate–Body Lea
PAGE 3
Symbol Parameter A = 25°C unless otherwise noted Test Conditions Min Typ Max Units –0.8 –1.7 –1.2 A V Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Maximum Continuous Drain–Source Diode Forward Current IS = –1.7 A(Note 2) Drain–Source Diode Forward VGS = 0 V, Voltage IF = –2.3A, VGS = 0 V, Reverse Recovery Time dIF/dt = 100A/µs 25 nS Notes: 1.
PAGE 4
NDS9948 Typical Characteristics 10 -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 VGS = -10V -6.0V -4.0V -ID, DRAIN CURRENT (A) 8 -3.5V 6 -3.0V 4 2 0 VGS=-3.5V 1.6 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0.8 0 1 2 3 4 5 6 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.5 ID = -1A ID = -2.3A VGS = -10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2.
PAGE 5
NDS9948 Typical Characteristics 600 ID = -2.3A VDS = -20V f = 1 MHz VGS = 0 V -30V 500 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -40V 6 4 CISS 400 300 200 COSS 2 100 CRSS 0 0 0 2 4 6 8 10 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 50 60 50 P(pk), PEAK TRANSIENT POWER (W) 100µ 10 1ms RDS(ON) LIMIT 10ms 100ms 1 1s VGS = -10V SINGLE PULSE RθJA = 135oC/W 0.1 10s DC TA = 25oC 0.01 0.
PAGE 6
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