Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsNDT2955, MOSFET

April 2002

2002 Fairchild Semiconductor Corporation

NDT2955 Rev. C

NDT2955

P-Channel Enhancement Mode Field Effect Transistor

General Description

This 60V P-Channel MOSFET is produced using

Fairchild Semiconductor’s high voltage Trench process.

It has been optimized for power management

plications.

Applications

• DC/DC converter

• Power management

Features

• –2.5 A, –60 V. R

DS(ON)

= 300mΩ @ V

= –10 V

DS(ON)

= 500mΩ @ V

= –4.5 V

• High density cell design for extremely low R

DS(ON)

• High power and current handling capability in a widely

used surface mount package.

SOT-223

(J23Z)

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –60 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) –2.5 A

– Pulsed –15

Maximum Power Dissipation (Note 1a) 3.0

(Note 1b)

1.3

(Note 1c)

1.1

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 42

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 12

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

NDT2955 NDT2955 13’’ 12mm 2500 units

NDT2955

Summary of content (5 pages)

PAGE 1
NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications. • –2.5 A, –60 V. RDS(ON) = 300mΩ @ VGS = –10 V RDS(ON) = 500mΩ @ VGS = –4.5 V • High density cell design for extremely low RDS(ON) Applications • High power and current handling capability in a widely used surface mount package.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Avalanche Ratings W DSS Drain-Source Avalanche Energy Single Pulse, VDD = 30 V, ID = 2.
PAGE 3
NDT2955 Typical Characteristics 2 12 -6.0V -7.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V -5.0V 9 6 -4.5V 3 -4.0V VGS=-4.5V 1.8 1.6 -5.0V 1.4 -6.0V 1.2 -7.0V -10V 0.8 0 0 1 2 3 4 0 5 3 Figure 1. On-Region Characteristics. 9 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 1.8 ID = -1.3A ID = -2.5A VGS = -10V 1.
PAGE 4
NDT2955 Typical Characteristics 800 VDS = -20V ID = -2.5A -30V -40V 6 4 600 400 COSS 200 2 CRSS 0 0 0 3 6 9 0 12 15 Qg, GATE CHARGE (nC) 30 60 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 100µs 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s 1 VGS = -10V SINGLE PULSE RθJA = 110oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 110°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.
PAGE 5
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