Datasheet

June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
________________________________________________________________________________
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter NDT452AP Units
V
DSS
Drain-Source Voltage -30 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current - Continuous (Note 1a) -5 A
- Pulsed - 15
P
D
Maximum Power Dissipation (Note 1a) 3 W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
NDT452AP Rev. B1
-5A, -30V. R
DS(ON)
= 0.065Ω @ V
GS
= -10V
R
DS(ON)
= 0.1Ω @ V
GS
= -4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and DC motor
control.
D
D S
G
D
S
G
© 1997 Fairchild Semiconductor Corporation