Datasheet
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250 µA -30 V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1 µA
T
J
= 55°C
-10 µA
I
GSSF
Gate - Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250 µA -1 -1.6 -2.8 V
T
J
= 125°C
-0.7 -1.2 -2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -5.0 A
0.052 0.065
Ω
T
J
= 125°C 0.075 0.13
V
GS
= -4.5 V, I
D
= -4.3 A
0.085 0.1
I
D(on)
On-State Drain Current V
GS
= -10 V, V
DS
= -5 V -15 A
V
GS
= -4.5 V, V
DS
= -5 V
-5
g
FS
Forward Transconductance V
DS
= -10 V, I
D
= -5.0 A 7 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
690 pF
C
oss
Output Capacitance 430 pF
C
rss
Reverse Transfer Capacitance 160 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6 Ω
9 20 ns
t
r
Turn - On Rise Time 20 30 ns
t
D(off)
Turn - Off Delay Time 40 50 ns
t
f
Turn - Off Fall Time 19 40 ns
Q
g
Total Gate Charge
V
DS
= -10 V,
I
D
= -5.0 A, V
GS
= -10 V
22 30 nC
Q
gs
Gate-Source Charge 3.2 nC
Q
gd
Gate-Drain Charge 5.2 nC
NDT452AP Rev. B1