Datasheet
PN200
PN200A
MMBT200
MMBT200A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
PN200
PN200A
*MMBT200
*MMBT200A
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200 357
°
C/W
SOT-23
Mark: N2 / N2A
C
B
E
TO-92
C
B
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN200 / MMBT200 / PN200A / MMBT200A