Datasheet

©2004 Fairchild Semiconductor Corporation Rev. A, November 2004
PN2222
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 600 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=10µA, I
E
=0 60 V
BV
CEO
Collector Emitter Breakdown Voltage I
C
=10mA, I
B
=0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 5 V
I
CBO
Collector Cut-off Current V
CB
=50V, I
E
=0 0.01 µA
I
EBO
Emitter Cut-off Current V
EB
=3V, I
C
=0 10 nA
h
FE
DC Current Gain V
CE
=10V, I
C
=0.1mA
V
CE
=10V, *I
C
=150mA
35
100 300
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
=500mA, I
B
=50mA 1 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
=500mA, I
B
=50mA 2 V
f
T
Current Gain Bandwidth Product V
CE
=20V, I
C
=20mA, f=100MHz 300 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 8 pF
PN2222
General Purpose Transistor
1. Emitter 2. Base 3. Collector
TO-92
1