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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

PN2907A / MMBT2907A / PZT2907A Rev. 1.1.2 1

January 2014

PN2907A / MMBT2907A / PZT2907A

60 V PNP General-Purpose Transistor

Features

• High DC Current Gain (h

) Range: 100 ~ 300

• High-Current Gain Bandwidth Product (f

200 MHz (Minimum)

• Maximum Turn-On Time (t

): 45 ns

• Maximum Turn-Off Time (t

off

): 100 ns

• Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A)

Applications

• General-Purpose Amplifier

• Switch

Ordering Information

Part Number Top Mark Package Packing Method

PN2907ABU 2907A TO-92 3L Bulk

PN2907ATF 2907A TO-92 3L Tape and Reel

PN2907ATFR 2907A TO-92 3L Tape and Reel

PN2907ATA 2907A TO-92 3L Ammo

PN2907ATAR 2907A TO-92 3L Ammo

MMBT2907A 2F SOT-23 3L Tape and Reel

MMBT2907A_D87Z 2F SOT-23 3L Tape and Reel

PZT2907A 2907A SOT-223 4L Tape and Reel

PN2907A

MMBT2907A PZT2907A

EBC

TO-92 SOT-23 SOT-223

Mark:2F

Description

The PN2907A, MMBT2907A, and PZT2907A are 60 V

PNP bipolar transistors designed for use as a general-

purpose amplifier or switch in applications that require

up to 500 mA. Offered in an ultra-small surface-mount

package (SOT-223), the PZT2907A is ideal for space-

constrained systems. The NPN complementary types

are the PN2222A, MMBT2222A, and PZT2222A;

respectively.

Summary of content (11 pages)

PAGE 1
PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalHigh-Current Gain Bandwidth Product (fT): purpose amplifier or switch in applications that require 200 MHz (Minimum) up to 500 mA. Offered in an ultra-small surface-mount Maximum Turn-On Time (ton): 45 ns package (SOT-223), the PZT2907A is ideal for spaceconstrained systems.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
PAGE 3
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 IC = -10 μA, IE = 0 V(BR)CBO Collector-Base Breakdown Voltage -60 V -60 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.
PAGE 4
VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.5 500 VCE = 5V 400 125 °C 300 0.3 25 °C 200 100 0.3 0.1 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 0 125 °C - 40 °C 1 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) 1 25 °C 0.4 125 °C β = 10 125 °C VCE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0.1 25 20 100 CAPACITANCE (pF) V CB = 35V 10 1 0.1 0.01 25 1 10 I C - COLLECTOR CURRE NT (mA) Figure 4. Base-Emitter On Voltage vs.
PAGE 5
250 I B1 = I B2 = I B1 = I B2 = 10 400 V cc = 15 V ts 150 TIME (nS) TIME (nS) 200 500 Ic 100 tr tf V cc = 15 V 300 200 t off 100 50 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 8. Turn-On and Turn-Off Times vs. Collector Current Figure 7. Switching Times vs. Collector Current 1 50 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) Ic 10 20 SOT-223 0.75 10 t r = 15 V 5 30 ns TO-92 0.5 SOT-23 0.
PAGE 6
CHAR. RELATIVE TO VALUES AT VCE = -10V CHAR. RELATIVE TO VALUES AT I C= -10mA 5 hoe 2 h re h fe 1 0.5 h ie 0.2 0.1_ V CE = -10 V T A = 25 oC _ 1 _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 CHAR. RELATIVE TO VALUES AT TA = 25oC Figure 11. Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 1.3 1.2 h re and hoe h re h ie h fe hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) -20 Figure 12.
PAGE 7
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions TO-92 (Bulk) D Figure 14. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions (Continued) TO-92 (Tape and Reel, Ammo) Figure 15. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions (Continued) SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS.
PAGE 10
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions (Continued) SOT-223 Figure 17. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 11
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