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MPSA06 / MMBTA06 / PZTA06 — NPN General Purpose Amplifier

MPSA06 / MMBTA06 / PZTA06 Rev. B0 1

March 2011

MPSA06 / MMBTA06 / PZTA06

NPN General Purpose Amplifier

Features

• This device is designed for general purpose amplifier applications at collector currents to 300mA.

• Sourced from Process 33.

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T

= 25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 80 V

CBO

Collector-Base Voltage 80 V

EBO

Emitter-Base Voltage 4.0 V

Collector Current - Continuous 500 mA

stg

Operating and Storage Junction Temperature Range - 55 to +150 °C

Symbol Parameter

Max.

Units

MPSA06 *MMBTA06 **PZTA06

Total Device Dissipation

Derate above 25°C

625

5.0

350

2.8

1,000

8.0

mW/°C

θJC

Thermal Resistance, Junction to Case 83.3 °C/W

θJA

Thermal Resistance, Junction to Ambient 200 357 125 °C/W

MPSA06

MMBTA06 PZTA06

EBC

TO-92 SOT-23 SOT-223

Mark:1G

Summary of content (5 pages)

PAGE 1
MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G EBC C B Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units 80 V Collector-Base Voltage 80 V Emitter-Base Voltage 4.
PAGE 2
Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0 80 V(BR)EBO 4.0 V Emitter-Base Breakdown Voltage IE = 100μA, IC = 0 ICEO Collector-Cutoff Current VCE = 60V, IB = 0 0.1 μA V ICBO Collector-Cutoff Current VCB = 80V, IE = 0 0.1 μA On Characteristics hFE 100 100 DC Current Gain IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.
PAGE 3
V CESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current 200 VCE = 1V 125 °C 150 25 °C 100 - 40 °C 50 0.001 IC 0.01 0.1 - COLLECTOR CURRENT (A) ββ = 10 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.1 1 10 100 I C - COLLECTOR CURRE NT (mA) β β = 10 0.4 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 0 0.1 1000 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 VCE = 5V 0.
PAGE 4
Input and Output Capacitance vs Reverse Voltage 100 f = 1.0 MHz 117 CAPACITANCE (pF) BV CER - BREAKDOWN VOLTAGE (V) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 116 115 114 113 C ib 10 Cob 1 112 111 0.1 1 10 100 0.1 0.1 1000 Power Dissipation vs Ambient Temperature 400 1 P D - POWER DISSIPATION (W) V CE = 5V 350 300 250 200 150 10 20 50 100 I C - COLLECTOR CURRENT (mA) Figure 9. Gain Bandwidth Product vs Collector Current SOT-223 0.75 TO-92 0.
PAGE 5
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