Datasheet

NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced
from Process 05.
MMBTA14MPSA14 PZTA14
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 30 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Characteristic Max Units
MPSA14 *MMBTA14 **PZTA14
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200 357 125
°
C/W
Thermal Characteristics TA = 25°C unless otherwise noted
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1N
B
C
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
 1997 Fairchild Semiconductor Corporation
A14, Rev B
MPSA14 / MMBTA14 / PZTA14