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MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier

MPSA42 / MMBTA42 / PZTA42 Rev. B2 1

October 2009

MPSA42 / MMBTA42 / PZTA42

NPN High Voltage Amplifier

Features

• This device is designed for application as a video output to drive color CRT and other high voltage applications.

• Sourced from Process 48.

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T

=25°C unless otherwise noted

* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead min. 6 cm

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 300 V

CBO

Collector-Base Voltage 300 V

EBO

Emitter-Base Voltage 6 V

Collector Current - Continuous 500 mA

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Parameter

Max

Units

MPSA42 *MMBTA42 **PZTA42

Total Device Dissipation

Derate above 25°C

625

5.0

240

1.92

1000

8.0

mW/°C

θJC

Thermal Resistance, Junction to Case 83.3 °C/W

θJA

Thermal Resistance, Junction to Ambient 200 515 125 °C/W

SOT-23

Mark: 1D

TO-92

SOT-223

MPSA42 MMBTA42 PZTA42

E B C

Summary of content (5 pages)

PAGE 1
MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features • This device is designed for application as a video output to drive color CRT and other high voltage applications. • Sourced from Process 48.
PAGE 2
Symbol TA=25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 V ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 μA IEBO Emitter-Cutoff Current VEB = 6 V, IC = 0 0.1 μA On Characteristics* hFE DC Current Gain VCE = 10 V, IC = 1.
PAGE 3
o 125 C 120 VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V] 140 VCE=10V o 100 C hFE- DC CURRENT GAIN o 75 C 100 o 25 C 80 60 o -40 C 40 20 0 1 10 100 1000 100 10 1 o 100 C o TA = 125 C 0.1 o 75 C o 25 C 0.01 1 10 100 1000 IC- COLLECTOR CURRENT [mA] IC- COLLECTOR CURRENT [mA] Figure 1. DC Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1.0 1.
PAGE 4
MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier Typical Performance Characteristics (Continued) 1.0 PD - POWER DISSIPATION [W] SOT-223 0.8 0.6 TO-92 0.4 0.2 SOT-23 0.0 0 25 50 75 100 125 150 o TC - CASE TEMPERATURE [ C] Figure 7. Power Dissipation vs Ambient Temperature © 2009 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. B2 www.fairchildsemi.
PAGE 5
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