Datasheet

©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
February 2006
MPSA56/MMBTA56/PZTA56 Rev. 1.0.2
MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier
MPSA56/MMBTA56/PZTA56
PNP General Purpose Amplifier
Description
This device is designed for general purpose amplifier
applications at collector currents to 300mA. Sourced
from Process 73
Absolute Maximum Ratings*
T
A
= 25
°
C unless otherwise specified.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
T
A
= 25°C unless otherwise noted.
*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."
**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm
2
.
Packages
Parameter Symbol Value Unit
Collector-Emitter Voltage V
CES
-80 V
Collector-Base Voltage V
CBO
-80 V
Emitter-Base Voltage V
EBO
-4.0 V
Collector Current – Continuous I
C
-500 mA
Operating and Storage Junction Temperature Range T
J
, T
STG
-55 to +150
°
C
Characteristic Symbol
Max
UnitsMPSA56 *MMBTA56 **PZTA56
Total Device Dissipation,
Derate above 25°C
P
D
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
Thermal Resistance, Junction to Case R
θ
JC
83.3 °C/W
Thermal Resistance, Junction to Ambient R
θ
JA
200 357 125 °C/W
C
B
E
TO-92
MPSA56 MMBTA56 PZTA56
C
B
E
SOT-23
Mark: 2G
B
C
C
SOT-223
E

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