Datasheet

MPSA64 / MMBTA64 / PZTA64 — PNP Darlington Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA64 / MMBTA64 / PZTA64 Rev. B0 1
November 2011
MPSA64 / MMBTA64 / PZTA64
PNP Darlington Transistor
Features
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61.
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
a
= 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -30 V
V
EBO
Emitter-Base Voltage -10 V
I
C
Collector Current - Continuous -1.2 A
T
J,
T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter
Max.
Units
MPSA64 *MMBTA64 **PZTA64
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 125 °C/W
MPSA64
MMBTA64 PZTA64
EBC
TO-92 SOT-23 SOT-223
Mark:2V
C
B
E
E
B
C
C