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MMBTA92 / PZTA92 — PNP High-Voltage Amplifier

MMBTA92 / PZTA92 Rev. 1.1.0 1

March 2014

MMBTA92 / PZTA92

PNP High-Voltage Amplifier

Ordering Information

Absolute Maximum Ratings

(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Figure 1. MMBTA92 Device Package Figure 2. PZTA92 Device Package

Part Number Top Mark Package Packing Method

MMBTA92 2D SOT-23 3L Tape and Reel

PZTA92 A92 SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

CEO

Collector-Emitter Voltage -300 V

CBO

Collector-Base Voltage -300 V

EBO

Emitter-Base Voltage -5 V

Collector Current - Continuous -500 mA

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

SOT-23

Mark: 2D

SOT-223

Description

This device is designed for high-voltage driver applica-

tions. Sourced from process 76.

Summary of content (7 pages)

PAGE 1
MMBTA92 / PZTA92 PNP High-Voltage Amplifier Description This device is designed for high-voltage driver applications. Sourced from process 76. C C E E SOT-23 Mark: 2D C SOT-223 B Figure 1. MMBTA92 Device Package B Figure 2. PZTA92 Device Package Ordering Information Part Number Top Mark Package Packing Method MMBTA92 2D SOT-23 3L Tape and Reel PZTA92 A92 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Max. Parameter MMBTA92 Total Device Dissipation 350 (3) PZTA92(4) Unit 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction to Ambient 357 125 °C/W Notes: 3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted.
PAGE 3
VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE - DC CURRE NT GAIN 140 120 125 °C 100 0.4 80 25 °C 60 - 40 °C 40 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 - 40 °C 0.1 V BE(O N) - BASE-EMITTER ON VOLTAGE (V) 1 1 10 I C - COLLECTOR CURRENT (mA) 100 0.9 1 0.8 0.8 - 40 °C 0.7 - 40 °C 0.6 25 °C 0.6 125 °C 0.5 25 °C 125 °C 0.4 β = 10 0.4 V CE = 5V 0.2 1 10 I C - COLLE CTOR CURRENT ( mA) 100 JUNCTION CAPACITANCE (pF) 100 VC B= 150V 10 1 0.
PAGE 4
f T - GAIN BANDWIDTH PRODUCT (MHz) 100 1 P D - POWER DISSIPATION (W) VCE = 50V 80 SOT-223 0.75 V CE = 15V 60 40 TO-92 0.5 SOT-23 0.25 20 0 0 1 10 20 50 100 I C - COLLECTOR CURRENT (mA) 25 50 75 100 TEMPERATURE ( oC) 125 150 Figure 10. Power Dissipation vs. Ambient Temperature Figure 9. Gain Bandwidth Product vs. Collector Current © 1997 Fairchild Semiconductor Corporation MMBTA92 / PZTA92 Rev. 1.1.0 0 www.fairchildsemi.
PAGE 5
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier Physical Dimensions SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS.
PAGE 6
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier Physical Dimensions (Continued) SOT-223 Figure 12. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
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