Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsPhotodiodes & PhototransistorsPhototransistor 5 mm

0.195 (4.95)

0.040 (1.02)

NOM

0.305 (7.75)

0.240 (6.10)

0.215 (5.45)

0.020 (0.51)

SQ. (2X)

REFERENCE

SURFACE

COLLECTOR

0.800 (20.3)

MIN

0.100 (2.54) NOM

0.500 (1.25)

EMITTER

PACKAGE DIMENSIONS

FEATURES

• NPN Silicon Phototransistor

• Package Type: T-1 3/4

• Notched Emitter: QED12X/QED22X/QED23X

• Narrow Reception Angle: 24°C

• Daylight Filter

• Package Material and Color: Black Epoxy

• High Sensitivity

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

EMITTER

COLLECTOR

SCHEMATIC

DESCRIPTION

The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.

QSD122 QSD123 QSD124



2001 Fairchild Semiconductor Corporation

DS300361 7/20/01 1 OF 4 www.fairchildsemi.com

Summary of content (4 pages)

PAGE 1
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES: 0.020 (0.51) SQ. (2X) EMITTER 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
PAGE 2
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 ABSOLUTE MAXIMUM RATINGS QSD123 QSD124 (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW NOTE: 1. Derate power dissipation linearly 1.
PAGE 3
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve 100 110 100 90 80 70 IC(ON) - Light Current (mA) 120 60 130 10 50 40 140 150 30 20 160 1 10 170 180 1.0 0.1 0.0 0.2 0.4 0.6 0.8 0.8 0.4 0.6 0.2 0.0 0.2 0.4 0.6 0.8 0 1.0 1.0 2 Ee - Radiant Intensity (mW/cm ) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs.
PAGE 4
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.