Datasheet

©2004 Fairchild Semiconductor Corporation
RFD14N05SM9A Rev. C1
RFD14N05SM9A
N-Channel Power MOSFET
50V, 14A, 100 mΩ
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Features
14A, 50V
•r
DS(ON)
= 0.100
Temperature Compensating PSPICE
®
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
•175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-252AA
Ordering Information
PART NUMBER PACKAGE BRAND
RFD14N05SM9A TO-252AA
F14N05
G
D
S
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
September 2013

Summary of content (8 pages)