Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsRFD16N05LSM9A, MOSFET

directly from logic circuit supply voltages.

5V range, thereby facilitating true on-off power control

provides full rated conductance at gate biases in the 3V to

accomplished through a special gate oxide design which

switches for bipolar transistors. This performance is

switching converters, motor relay drivers and emitter

such as programmable controllers, switching regulators,

RFD16N05LSM Rev. C1

d Semiconductor Corporation

RFD16N05LSM

N-Channel Logic Level Power MOSFET

50V, 16A, 47 mΩ

These are N-Channel logic level power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI

integrated circuits gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use with logic level (5V) driving sources in applications

Formerly developmental type TA09871.

Features

• 16A, 50V

•r

(ON)

= 0.047Ω

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N05LSM9A TO-252AA RFD16N05LSM

JEDEC TO-252AA

GATE

SOURCE

DRAIN (FLANGE)

Data Sheet

September 2013

Summary of content (7 pages)

PAGE 1
RFD16N05LSM September 2013 Data Sheet N-Channel Logic Level Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
PAGE 2
RFD16N05LSM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD16N05LSM9A 50 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . .
PAGE 3
RFD16N05LSM Typical Performance Curves Unless Otherwise Specified 20 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 5 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 25 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 102 ID MAX CONTINUOUS 10 OPERATION IN THIS AREA LIMITED BY rDS(ON) DC 1 0.1 102 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 45 VGS = 4V TC = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VGS = 5V 30 VGS = 3V 15 VGS = 2V 0 0 150 1.
PAGE 4
RFD16N05LSM Typical Performance Curves Unless Otherwise Specified (Continued) 2.5 ID = 16V VDS = 15V ID = 16A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 2.0 1.5 1.0 0.5 0.5 6 5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0 -50 7 150 1.1 1.0 0.9 0.8 0.7 0 50 100 150 1.2 1.0 0.8 0.6 0 -50 200 TJ, JUNCTION TEMPERATURE (oC) 0 50 100 FIGURE 10.
PAGE 5
RFD16N05LSM Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN IAS + RG REQUIRED PEAK IAS VDS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 14. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 15. SWITCHING TIME TEST CIRCUIT 50% 50% PULSE WIDTH 10% FIGURE 16.
PAGE 6
RFD16N05LSM PSPICE Electrical Model .SUBCKT RFD16N05L 2 1 3 ; REV 4/8/92 Ca 12 8 3.33e-9 Cb 15 14 3.11e-9 Cin 6 8 1.21e-9 DPLCAP RSCL1 + 51 5 ESCL 51 50 ESG + 6 8 GATE 9 1 LGATE 20 RGATE VTO + 21 6 DBODY - MOS2 CIN 8 Mos1 16 6 8 8 MOSMOD M=0.99 Mos2 16 21 8 8 MOSMOD M=0.
PAGE 7
RFD16N05LSM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.