Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsRFD16N05SM9A, MOSFET

RFD16N05, RFD16N05SM

16A, 50V, 0.047 Ohm, N-Channel Power

MOSFETs

The RFD16N05 and RFD16N05SM N-channel power

MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of

LSI integrated circuits, gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use in applications such as switching regulators,

switching converters, motor drivers, and relay drivers. These

transistors can be operated directly from integrated circuits.

Formerly developmental type TA09771.

Features

• 16A, 50V

•r

DS(ON)

= 0.047Ω

• Temperature Compensating PSPICE

Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

•175

C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-251AA JEDEC TO-252AA

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N05 TO-251AA D16N05

RFD16N05SM TO-252AA D16N05

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.

SOURCE

DRAIN (FLANGE)

GATE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

Data Sheet November 2003

Summary of content (8 pages)

PAGE 1
RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
PAGE 2
RFD16N05, RFD16N05SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . .
PAGE 3
RFD16N05, RFD16N05SM Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 20 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 16 12 8 4 0.2 0 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 25 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TENPERATURE 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 Zθ JC, NORMALIZED THERMAL IMPEDANCE 1 0.5 0.2 PDM 0.1 0.1 0.05 t1 0.02 0.
PAGE 4
RFD16N05, RFD16N05SM Typical Performance Curves Unless Otherwise Specified (Continued) 50 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) VGS = 20V STARTING TJ = 25oC 10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 1 0.01 VGS = 10V VGS = 8V VGS = 7V 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC 30 VGS = 6V 20 VGS = 5V 10 VGS = 4.5V 0 1 0.
PAGE 5
RFD16N05, RFD16N05SM Unless Otherwise Specified (Continued) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 1200 CISS 800 COSS 400 CRSS VDD = BVDSS 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) VDD = BVDSS 7.5 37.5 5 25 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 12.5 2.5 RL = 3.125Ω IG(REF) = 0.
PAGE 6
RFD16N05, RFD16N05SM Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 20V VGS Qg(10) + VDD DUT IG(REF) VGS = 10V VGS - VGS = 2V 0 Qg(TH) IG(REF) 0 FIGURE 18. GATE CHARGE TEST CIRCUIT ©2003 Fairchild Semiconductor Corporation FIGURE 19. GATE CHARGE WAVEFORM RFD16N05, RFD16N05SM Rev.
PAGE 7
RFD16N05, RFD16N05SM PSPICE Electrical Model .SUBCKT RFD16N05 2 1 3 ; rev 10/31/94 CA 12 8 1.788e-10 CB 15 14 1.875e-10 CIN 6 8 8.33e-10 DPLCAP RSCL1 + 51 5 ESCL 51 50 ESG + 6 8 GATE 9 1 LGATE 20 RGATE VTO EVTO + 18 8 + 6 S1A S1B S2A S2B DBODY 17 18 - MOS2 MOS1 CIN 8 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.
PAGE 8
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.