Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsRFD16N06LESM9A, MOSFET

RFD16N06LESM Rev. C0

RFD16N06LESM

N-Channel Logic Level Power MOSFET

60 V, 16 A, 47 mΩ

These are N-Channel power MOSFETs manufactured

using a modern process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, relay drivers and emitter switches for bipolar

transistors. This performance is accomplished through a

special gate oxide design which provides full rated

conductance at gate bias in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic level

(5V) integrated circuits.

Formerly developmental type TA49027.

Features

• 16A, 60V

•r

DS(ON)

= 0.047Ω

• Temperature Compensating PSPICE

Model

• Can be Driven Directly from CMOS, NMOS, TTL

Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N06LESM9A

TO-252AA 16N06LE

JEDEC TO-252AA

GATE

SOURCE

DRAIN (FLANGE)

Data Sheet October 2013

ymbol

Summary of content (7 pages)

PAGE 1
RFD16N06LESM October 2013 Data Sheet N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
PAGE 2
RFD16N06LESM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
RFD16N06LESM Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 20 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 15 10 5 0.
PAGE 4
RFD16N06LESM Typical Performance Curves 2.5 VDD = 15V NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 80 175oC 25oC -55oC 60 40 20 0 0 1.5 3.0 4.5 6.0 2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VGS = 5V, ID = 16A 1.5 1.0 0.5 0 -80 7.5 -40 FIGURE 7. TRANSFER CHARACTERISTICS 2.0 VGS = VDS, ID = 250µA 1.5 1.0 0.
PAGE 5
RFD16N06LESM Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS RG VDS IAS + VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 14. UNCLAMPED ENERGY WAVEFORMS tON VDS tOFF td(ON) RL VGS td(OFF) tr VDS tf 90% 90% + - DUT VDD 10% 10% RGS 90% VGS VGS 10% FIGURE 15. SWITCHING TIME TEST CIRCUIT VDS 50% 50% PULSE WIDTH FIGURE 16.
PAGE 6
RFD16N06LESM PSPICE Electrical Model SUBCKT RFD16N06LESM 2 1 3 ; rev 8/2/93 CA 12 8 1.46e-9 CB 15 14 1.46e-9 CIN 6 8 1.
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RFD16N06LESM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.