Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsRFD3055LESM9A, MOSFET

RFD3055LE, RFD3055LESM Rev. C0

RFD3055LE, RFD3055LESM

N-Channel Logic Level Power MOSFET

60V, 11A, 107 mΩ

These N-Channel enhancement-mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers and relay

drivers. These transistors can be operated directly from

integrated circuits.

Formerly developmental type TA49158.

Features

• 11A, 60V

•r

DS(ON)

= 0.107Ω

• Temperature Compensating PSPICE

Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER PACKAGE BRAND

RFD3055LE TO-251AA F3055L

RFD3055LESM9A

TO-252AA F3055L

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN (FLANGE)

GATE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

Data Sheet

September 2013

Summary of content (8 pages)

PAGE 1
RFD3055LE, RFD3055LESM Data Sheet N-Channel Logic Level Power MOSFET 60V, 11A, 107 mΩ These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
PAGE 2
RFD3055LE, RFD3055LESM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD3055LE, RFD3055LESM9A 60 60 ±16 11 Refer to Peak Current Curve Refer to UIS Curve 38 0.25 -55 to 175 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
RFD3055LE, RFD3055LESM Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 15 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 VGS = 10V 10 VGS = 4.5V 5 0.2 0 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 ZθJC, NORMALIZED THERMAL IMPEDANCE 1 DUTY CYCLE - DESCENDING ORDER 0.
PAGE 4
RFD3055LE, RFD3055LESM Typical Performance Curves Unless Otherwise Specified (Continued) 15 VGS = 10V If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 VGS = 5V 12 9 VGS = 3.5V 6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3 0.01 0.1 1 10 VGS = 3V TC = 25oC 0 0.
PAGE 5
RFD3055LE, RFD3055LESM Typical Performance Curves Unless Otherwise Specified (Continued) 1.2 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250µA 1.0 0.8 1.1 1.0 0.9 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) -80 200 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 13.
PAGE 6
RFD3055LE, RFD3055LESM Test Circuits and Waveforms (Continued) tON tOFF td(ON) VDS td(OFF) tf tr VDS 90% 90% RL VGS + - DUT 10% 0 VDD 10% 90% RGS VGS VGS 0 10% FIGURE 18. SWITCHING TEST CIRCUIT 50% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS VDS VDD RL Qg(TOT) VDS Qg(10) OR Qg(5) VGS + VDD VGS DUT Ig(REF) VGS = 2V 0 VGS = 1V FOR L2 DEVICES Qg(TH) VGS = 20V VGS = 10V FOR L2 DEVICES VGS = 10V VGS = 5V FOR L2 DEVICES Ig(REF) 0 FIGURE 20.
PAGE 7
RFD3055LE, RFD3055LESM PSPICE Electrical Model .SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95 CA 12 8 3.9e-9 CB 15 14 4.9e-9 CIN 6 8 3.
PAGE 8
RFD3055LE, RFD3055LESM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.