Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsRFP12N10L, MOSFET N channel 100V

RFP12N10L

12A, 100V, 0.200 Ohm, Logic Level,

N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors speciﬁcally designed for use

with logic level (5V) driving sources in applications such as

programmable controllers, automotive switching and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated

conduction at gate biases in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic circuit

supply voltages.

Formerly developmental type TA09526.

Features

• 12A, 100V

•r

DS(ON)

= 0.200

Ω

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,

TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER PACKAGE BRAND

RFP12N10L TO-220AB F12N10L

NOTE: When ordering, include the entire part number.

SOURCE

DRAIN

GATE

DRAIN

(TAB)

Data Sheet January 2002

Summary of content (6 pages)

PAGE 1
RFP12N10L Data Sheet January 2002 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.
PAGE 2
RFP12N10L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12N10L UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
RFP12N10L Typical Performance Curves Unless Otherwise Specified 100 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 ID(MAX) CONTINUOUS 10 DC OPERATION 1 60W 0.2 0 0 50 100 0.1 1 150 TC, CASE TEMPERATURE (oC) 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ID(ON), ON-STATE DRAIN CURRENT (A) 20 PULSE DURATION = 80µs DUTY CYCLE ≤ 0.
PAGE 4
RFP12N10L Typical Performance Curves NORMALIZED GATE THRESHOLD VOLTAGE (V) 1.2 800 VDS = VGS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA C, CAPACITANCE (pF) 1.3 Unless Otherwise Specified (Continued) 1.1 1.0 0.9 0.8 600 CISS 400 COSS 200 0.7 CRSS 0.6 0 50 100 0 150 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 8.
PAGE 5
RFP12N10L Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 10V VGS Qg(5) + VDD DUT IG(REF) VGS = 5V VGS - VGS = 1V 0 Qg(TH) IG(REF) 0 FIGURE 12. GATE CHARGE TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation FIGURE 13. GATE CHARGE WAVEFORMS RFP12N10L Rev.
PAGE 6
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