Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsRFP50N06, MOSFET N channel 60V

4-467

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

RFG50N06, RFP50N06, RF1S50N06SM

50A, 60V, 0.022 Ohm, N-Channel Power

MOSFETs

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49018.

Features

• 50A, 60V

•r

DS(ON)

= 0.022Ω

• Temperature Compensating PSPICE

Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

C Operating Temperature

Symbol

Packaging

Ordering Information

PART NUMBER PACKAGE BRAND

RFG50N06 TO-247 RFG50N06

RFP50N06 TO-220AB RFP50N06

RF1S50N06SM TO-263AB F1S50N06

NOTE: When ordering, use the entire part number. Add the suffix, 9A,

to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.

JEDEC STYLE TO-247 JEDEC TO-220AB

JEDEC TO-263AB

DRAIN

(BOTTOM

SIDE METAL)

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

Data Sheet July 1999 File Number

3575.4

Summary of content (8 pages)

PAGE 1
RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
PAGE 2
RFG50N06, RFP50N06, RF1S50N06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
RFG50N06, RFP50N06, RF1S50N06SM Unless Otherwise Specified 1.2 60 1.0 50 ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 40 30 20 10 0 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 25 175 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 THERMAL IMPEDANCE ZθJC, NORMALIZED 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.
PAGE 4
RFG50N06, RFP50N06, RF1S50N06SM Typical Performance Curves Unless Otherwise Specified (Continued) 300 125 100 ID , DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) VGS = 10V STARTING TJ = 25oC STARTING TJ = 150oC 10 If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) VGS = 7V 75 50 0.1 1 VGS = 6V VGS = 5V 25 If R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 VGS = 8V 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 4V 0 0 10 1.
PAGE 5
RFG50N06, RFP50N06, RF1S50N06SM Unless Otherwise Specified (Continued) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD 3000 VDS , DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10 60 4000 CISS 2000 COSS 1000 CRSS 0 0 5 10 15 20 VDD = BVDSS VDD = BVDSS 7.5 45 5.0 30 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS RL = 1.2Ω Ig(REF) = 1.45mA VGS = 10V 15 2.
PAGE 6
RFG50N06, RFP50N06, RF1S50N06SM Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 20V VGS Qg(10) + VDD DUT Ig(REF) VGS = 10V VGS - VGS = 2V 0 Qg(TH) Ig(REF) 0 FIGURE 18. GATE CHARGE TEST CIRCUIT 4-472 FIGURE 19.
PAGE 7
RFG50N06, RFP50N06, RF1S50N06SM PSPICE Electrical Model .SUBCKT RFP50N06 2 1 3 REV 2/22/93 *NOM TEMP = 25oC CA 12 8 3.68e-9 CB 15 14 3.625e-9 CIN 6 8 1.98e-9 DRAIN 2 LDRAIN 5 DBODY 7 5 DBDMOD DBREAK 5 11DBKMOD DPLCAP 10 5 DPLCAPMOD 10 DBREAK EVTO 9 1 LGATE 20 + GATE RGATE 18 8 - RDRAIN 6 8 VTO 16 + ESG + EBREAK 11 7 17 18 64.59 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 DPLCAP - 6 MOS1 RIN 8 12 LDRAIN 2 5 1e-9 LGATE 1 9 5.65e-9 LSOURCE 3 7 4.
PAGE 8
RFG50N06, RFP50N06, RF1S50N06SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.