Datasheet

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IGBT

SGL160N60UFD

Ultrafast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

Features

• High speed switching

• Low saturation voltage : V

(sat) = 2.1 V @ I

= 80A

• High input impedance

• CO-PAK, IGBT with FRD: t

= 75nS (typ.)

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description SGL160N60UFD Units

CES

Collector-Emitter Voltage 600 V

GES

Gate-Emitter Voltage ± 20 V

Collector Current @ T

= 25°C 160 A

Collector Current @ T

= 100°C80 A

CM (1)

Pulsed Collector Current 300 A

Diode Continuous Forward Current @ T

=100°C25 A

Diode Maximum Forward Current 280 A

M a x i m u m P o w e r D i s s i p a t i o n @ T

= 25°C 250 W

Maximum Power Dissipation @ T

= 100°C 100 W

Operating Junction Temperature -55 to +150 °C

stg

Storage Temperature Range -55 to +150 °C

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Typ. Max. Units

θJC

(IGBT) Thermal Resistance, Junction-to-Case -- 0.5 °C/W

θJC

(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W

θJA

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

Applications

AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.

TO-264

Summary of content (8 pages)

PAGE 1
SGL160N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A High input impedance CO-PAK, IGBT with FRD: trr = 75nS (typ.
PAGE 2
C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 80mA, VCE = VGE IC = 80A, VGE = 15V IC = 160A, VGE = 15V 3.5 --- 4.5 2.1 2.6 6.5 2.
PAGE 3
20V Common Emitter T C = 25℃ 240 15V 12V Collector Current, I C [A] Collector Current, I C [A] Common Emitter V GE = 15V T C = 25℃ T C = 125℃ 200 400 V GE = 10V 300 200 100 160 120 80 40 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] 1 10 Collector - Emitter Voltage, V CE [V] Fig 2. Typical Saturation Voltage Characteristics Fig 1.
PAGE 4
1000 Common Emitter VGE = 0V, f = 1MHz T C = 25℃ 7000 Cies Common Emitter VCC = 300V, VGE = ± 15V IC = 80A TC = 25℃ TC = 125℃ Switching Time [ns] Capacitance [pF] 6000 5000 4000 3000 Coes 2000 Ton Tr 100 Cres 1000 0 1 20 10 1 30 10 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.
PAGE 5
15 Common Emitter V CC = 300V, V GE = ± 15V RG = 3.9Ω T C = 25℃ T C = 125℃ Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 10000 SGL160N60UFD 20000 1000 Eoff Common Emitter RL = 37.5 Ω T C = 25℃ 12 9 300 V 6 200 V VCC = 100 V 3 Eon 0 100 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 1000 500 100 IC MAX.
PAGE 6
Reverse Recovery Current, Irr [A] Forward Current, I F [A] 100 10 V R = 200V IF = 25A T C = 25℃ T C = 100℃ 10 1 1 0 1 2 100 3 Fig 19. Reverse Recovery Current Fig 18.
PAGE 7
SGL160N60UFD Package Dimension (8.30) (1.00) (2.00) (7.00) 20.00 ±0.20 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 (7.00) (2.00) (11.00) 1.50 ±0.20 ) .20 .00 0 ±0 0) 2.0 (R (R1 (0.50) ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.
PAGE 8
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