Datasheet

Si3443DV
Si3443DV, REV A
Si3443DV
P-Channel 2.5V Specified PowerTrench MOSFET
April 2001
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage -20 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current - Continuous (Note 1) -4 A
Drain Current - Pulsed (Note 1a) -20
P
D
Power Dissipation for Single Operation (Note 1a) 1.6 W
(Note 1b)
0.8
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 30
°C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.443 Si3443DV 7’’ 8mm 3000 units
Features

-4 A, -20 V. R
DS(ON)
= 0.065 Ω @ V
GS
= -4.5 V
R
DS(ON)
= 0.100 Ω @ V
GS
= -2.5 V
 Fast switching speed.
 Low gate charge (7.2nC typical).
 High performance trench technology for extremely
low R
DS(ON)
.
 SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
3
5
6
4
1
2
3
D
D
D
S
D
G
SuperSOT -6
TM
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
 Load switch
 Battery protection
 Power management