Datasheet

Si4532DY
Si4532DY, Rev. C
Si4532DY*
Dual N- and P-Channel Enhancement Mode Field Effect Transistor
September 1999
Features
 N-Channel 3.9A, 30V.R
DS(ON)
= 0.065Ω @V
GS
= 10V
R
DS(ON)
= 0.095Ω @V
GS
= 4.5V.
 P-Channel -3.5A,-30V.R
DS(ON)
= 0.085Ω @V
GS
= -10V
R
DS(ON)
= 0.190 Ω @V
GS
= -4.5V.
 High density cell design for extremely low R
DS(ON)
.
 High power and current handling capability in a widely
used surface mount package.
 Dual (N & P-Channel) MOSFET in surface mount
package.
1999 Fairchild Semiconductor Corporation
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General Description
These dual N- and P-Channel enhancement mode power
field effect transistors are produced using Fairchild's
propretary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.