Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsSI4542DY, MOSFET

January 2001

2001 Fairchild Semiconductor International

Si4542DY Rev A

Si4542DY

30V Complementary PowerTrench







MOSFET

General Description

This complementary MOSFET device is produced using

Fairchild’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance.

Applications

• DC/DC converter

• Power management

Features

• Q1: N-Channel

6 A, 30 V R

DS(on)

= 28 mΩ @ V

= 10V

DS(on)

= 35 mΩ @ V

= 4.5V

• Q2: P-Channel

–6 A, –30 V R

DS(on)

= 32 mΩ @ V

= –10V

DS(on)

= 45 mΩ @ V

= –4.5V

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Units

DSS

Drain-Source Voltage 30 –30 V

GSS

Gate-Source Voltage

±20 ±20

Drain Current - Continuous (Note 1a) 6–6A

- Pulsed 20 –20

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

1.2

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

4542 Si4542DY 13” 12mm 2500 units

Si4542DY

Summary of content (4 pages)

PAGE 1
Si4542DY 30V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel RDS(on) = 28 mΩ @ VGS = 10V 6 A, 30 V RDS(on) = 35 mΩ @ VGS = 4.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = –24 V, VGS = 0 V VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 –30 VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µA Gate Threshold Voltage ID = 250 µA, Referenced to 25°C Temperature Coefficient ID = –
PAGE 3
IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = –1.3 A (Note 2) Q1 Q2 Q1 Q2 0.7 –0.7 1.3 –1.3 1.2 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.
PAGE 4
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.