Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsDiodesSMBJ15CA

SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors

SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.0 1

December 2013

SMBJ5V0(C)A - SMBJ170(C)A

600 Watt Transient Voltage Suppressors

Features

• Glass-Passivated Junction

• 600 W Peak Pulse Power Capability

on 10/1000 μs Waveform.

• Excellent Clamping Capability

• Low-Incremental Surge Resistance

• Fast Response Time: Typically Less than 1.0 ps

from 0 V to BV for Unidirectional and 5.0 ns for Bidirectional

•Typical I

Less than 1.0 μA Above 10 V

• UL Certificate #E258596

• Devices for Bipolar Applications

• Bidirectional Types Use CA Suffix

• Electrical Characteristics Apply in Both Directions

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Note:

1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum.

Symbol Parameter Value Unit

PPM

Peak Pulse Power Dissipation on 10/1000 μs Waveform 600 W

PPM

Peak Pulse Current on 10/1000 μs Waveform See Table A

FSM

Non-Repetitive Peak Forward Surge Current

Superimposed on Rated Load (JEDEC Method)

(1)

100 A

STG

Storage Temperature Range -55 to 150 °C

Operating Junction Temperature Range -55 to 150 °C

SMB/DO-214AA

COLOR BAND DENOTES CATHODE

ON UNIDIRECTIONAL DEVICES ONLY.

NO COLOR BAND ON BIDIRECTIONAL

DEVICES.

Summary of content (6 pages)

PAGE 1
SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors Features • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV for Unidirectional and 5.0 ns for Bidirectional • Typical IR Less than 1.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Breakdown Voltage VBR (V) Min. Max. Part Marking(2) Reverse Stand-Off Voltage VRWM (V) SMBJ5V0(C)A KE 5.0 6.40 7.00 10 9.2 65.2 800 SMBJ6V0(C)A KG 6.0 6.67 7.37 10 10.3 58.3 800 Uni-Directional Bi-Directional (C) Device Test Current IT (mA) Clamping Voltage at IPPM VC (V) Peak Pulse Current IPPM (A) Reverse Leakage at VRWM IR (μA)(3) SMBJ6V5(C)A KK 6.5 7.22 7.98 10 11.2 53.6 500 SMBJ7V0(C)A KM 7.0 7.78 8.60 10 12.0 50.
PAGE 3
Values are at TA = 25°C unless otherwise noted. Breakdown Voltage VBR (V) Uni-Directional Bi-Directional (C) Device Part Marking(2) Reverse Stand-Off Voltage VRWM (V) Min. Max. SMBJ85(C)A NV 85 94.4 104.0 SMBJ90(C)A NX 90 100.0 111.0 1 146.0 4.1 5 SMBJ100(C)A NZ 100 111.0 123.0 1 162.0 3.7 5 5 Test Current IT (mA) Clamping Voltage at IPPM VC (V) Peak Pulse Current IPPM (A) Reverse Leakage at VRWM IR (μA)(3) 1 137.0 4.4 5 SMBJ110(C)A PE 110 122.0 135.0 1 177.0 3.
PAGE 4
100 TA = 25º C PULSE POWER (%) PULSE POWER (kW) 100 10 1 0.1 0.0001 75 50 25 0 0.001 0.01 0.1 PULSE WIDTH (ms) 1 10 0 Half Value-Ipp 2 10/1000μ μsec Waveform as Defined by R.E.A. 50 Measured at Zero Bias 1000 500 Measured at Stand-Off Voltage (V mw) 200 100 50 e-kt 20 td 0 0 1 2 TIME (ms) 3 10 4 Figure 3. Pulse Waveform 200 FORWARD SURGE CURRENT (A) 200 TA = 25º C f = 1.
PAGE 5
DO-214AA (SMB) B 5.60 5.08 B 0.13 M C B A 2.50 3.95 3.30 2.20 1.91 B 2.20 4.70 B A 4.75 4.05 LAND PATTERN RECOMMENDATION 8° 0° 2.65 MAX A R0.15 4X 2.45 1.90 GAUGE PLANE 0.45 B C 2.15 1.65 0.30 0.05 0.203 0.050 0.13 M 0.41 0.15 0 -8° C B A NOTES: 1.60 0.75 DETAIL A SCALE 20 : 1 A. EXCEPT WHERE NOTED CONFORMS TO JEDEC DO214 VARIATION AA. B DOES NOT COMPLY JEDEC STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS.
PAGE 6
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.