Datasheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.3 3
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value Units
Total Device
T
STG
Storage Temperature All -40 to +150 °C
T
OPR
Operating Temperature All -40 to +100 °C
T
SOL
Lead Solder Temperature All 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate Above 25°C
All 250 mW
2.94 mW/°C
Emitter
I
F
DC/Average Forward Input Current All 60 mA
V
R
Reverse Input Voltage TIL111M 3 V
MOC8100M, TIL117M 6
I
F
(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) All 3 A
P
D
LED Power Dissipation @ T
A
= 25°C
Derate Above 25°C
All 120 mW
1.41 mW/°C
Detector
V
CEO
Collector-Emitter Voltage All 30 V
V
CBO
Collector-Base Voltage All 70 V
V
ECO
Emitter-Collector Voltage TIL111M, TIL117M 7 V
V
EBO
Emitter-Base Voltage All 7
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate Above 25°C
All 150 mW
1.76 mW/°C