Datasheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.3 5
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(Continued)
T
A
= 25°C unless otherwise specified.
Transfer Characteristics
Isolation Characteristics
*All Typical values at T
A
= 25°C.
Symbol Parameter Test Conditions Device Min Typ* Max Unit
DC Characteristics
CTR
CE
Current Transfer Ratio,
Collector to Emitter
I
F
= 10 mA, V
CE
= 10 V TIL117M 50 %
I
F
= 1 mA, V
CE
= 5 V MOC8100M 50 %
I
F
= 1 mA, V
CE
= 5 V,
T
A
= 0°C to +70°C
30
I
C(ON)
On-State Collector Current
(Phototransistor Operation)
I
F
= 16 mA, V
CE
= 0.4 V TIL111M 2 mA
On-State Collector Current
(Photodiode Operation)
I
F
= 16 mA, V
CB
= 0.4 V 7 µA
V
CE (SAT)
Collector-Emitter Saturation
Voltage
I
C
= 500 µA, I
F
= 10 mA TIL117M 0.4 V
I
C
= 2 mA, I
F
= 16 mA TIL111M 0.4
I
C
= 100 µA, I
F
= 1 mA MOC8100M 0.5
AC Characteristics
W
ON
Turn-On Time I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω (Fig. 13)
MOC8100M 20 µs
TIL117M 10
W
OFF
Turn-Off Time MOC8100M 20 µs
TIL117M 10
t
r
Rise Time MOC8100M
TIL117M
2µs
t
f
Fall Time 2
t
r
Rise Time
(Phototransistor Operation)
I
C(ON)
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω (Fig. 13)
TIL111M 10 µs
t
f
Fall Time
(Phototransistor Operation)
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60 Hz, t = 1 s 7500 V
AC(PK)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
C
ISO
Isolation Capacitance V
I-O
= 0, f = 1 MHz 0.2 pF