Datasheet

ManualsBrandsFairchild ManualsDiscrete SemiconductorsMOSFET N, 60 V 1.7 A 500 mW SOT-23

FDN5630

FDN5630 Rev. C

March 2000

2000 Fairchild Semiconductor Corporation

Absolute Maximum Ratings T

= 25 C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 60 V

GSS

Gate-Source Voltage

Drain Current - Continuous

(Note 1a)

1.7 A

- Pulsed 10

Power Dissipation for Single Operation

(Note 1a)

0.5 W

(Note 1b)

0.46

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

C/W

Thermal Resistance, Junction-to-Case

(Note 1)

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

5630 FDN5630 7 8mm 3000 units

SuperSOT -3

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers.

This MOSFET features very low R

DS(ON)

in a small SOT23

footprint. Fairchild’s PowerTrench technology provides

faster switching than other MOSFETs with comparable

DS(ON)

specifications. The result is higher overall

efficiency with less board space.

Applications

• DC/DC converter

• Motor drives

Features

•

1.7 A, 60 V. R

DS(ON)

= 0.100 Ω @ V

= 10 V

DS(ON)

= 0.120 Ω @ V

= 6 V.

• Optimized for use in high frequency DC/DC converters.

• Low gate charge.

• Very fast switching.

• SuperSOT

- 3 provides low R

DS(ON)

in SOT23 footprint.

FDN5630

60V N-Channel PowerTrench





MOSFET

Summary of content (5 pages)

PAGE 1
FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space. • 1.
PAGE 2
Symbol TA = 25 C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 20 V, VDS = 0 V 100 nA VGS = -20 V, VDS = 0 V -100 nA IGSSR On Characteristics 60 V 63 mV
PAGE 3
FDN5630 Typical Characteristics 10 1.5 5.0V 6.0V 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.5V 6 4.0V 4 2 3.5V 1.4 VGS = 4.5V 1.3 5.0V 1.2 6.0V 7.0V 1.1 10V 1 0 0 1 2 3 4 0.9 5 0 VDS, DRAIN-SOURCE VOLTAGE (V) 2 4 6 8 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 ID =1.
PAGE 4
(continued) 10 600 VDS = 10V ID = 1.7A 20V 8 f = 1MHz VGS = 0 V 500 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDN5630 Typical Characteristics 6 4 2 CISS 400 300 200 COSS 100 CRSS 0 0 0 2 4 6 0 8 10 30 40 10 SINGLE PULSE o RθJA=270 C/W 16 10ms o TA=25 C POWER (W) 100ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 270oC/W 0.1 60 20 100µs 1ms RDS(ON) LIMIT 1 50 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics.
PAGE 5
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