Datasheet

ManualsBrandsFairchild ManualsDiscrete SemiconductorsMOSFET N, 30 V 12.5 A 2.5 W SO-8

November 2004

FDS6680A Rev F1(W)

FDS6680A

Single N-Channel, Logic Level, PowerTrench

MOSFET

General Description

This N-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor’s advanced Power

Trench process that has been especially tailored to

minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

• 12.5 A, 30 V R

DS(ON)

= 9.5 mΩ @ V

= 10 V

DS(ON)

= 13 mΩ @ V

= 4.5 V

• Ultra-low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 12.5 A

– Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Ambient

(Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6680A FDS6680A 13’’ 12mm 2500 units

FDS6680A

Summary of content (5 pages)

PAGE 1
FDS6680A Single N-Channel, Logic Level, PowerTrench® MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 12.5 A, 30 V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 24 V, ID = 250 µA 30 ID = 250 µA, Referenced to 25°C V 25 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C IGSS VGS = ±20 V, Gate–Body Leakage On Characteristics VDS = 0 V mV/°C 1 µA 10 µA ±100 nA (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, R
PAGE 3
FDS6680A Typical Characteristics 50 2.2 VGS = 10V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 4.0V 4.5V 3.5V 30 20 10 3.0V 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 2 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.03 ID = 12.5A VGS = 10V ID = 6.
PAGE 4
FDS6680A Typical Characteristics 2400 f = 1 MHz VGS = 0 V ID = 12.5A 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 20V 4 1800 Ciss 1200 Coss 600 2 Crss 0 0 0 5 10 15 20 25 30 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.
PAGE 5
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