Datasheet

ManualsBrandsFairchild ManualsDiscrete SemiconductorsMOSFET P, -25 V -0.46 A 350 mW SOT-23

August 1997

FDV304P

Digital FET, P-Channel

General Description Features

Absolute Maximum Ratings T

= 25

C unless other wise noted

Symbol Parameter FDV304P Units

DSS

Drain-Source Voltage -25 V

GSS

Gate-Source Voltage -8 V

Drain Current - Continuous -0.46 A

- Pulsed -1.5

Maximum Power Dissipation 0.35 W

STG

Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6.0 kV

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient 357 °C/W

FDV304P Rev.E1

-25 V, -0.46 A continuous, -1.5 A Peak.

DS(ON)

= 1.1 Ω @ V

= -4.5 V

DS(ON)

= 1.5 Ω @ V

= -2.7 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th)

< 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

This P-Channel enhancement mode field effect transistors is

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery power applications

such as notebook computers and cellular phones. This device

has excellent on-state resistance even at gate drive voltages as

low as 2.5 volts.

Mark:304

SOT-23

SuperSOT

-8

SOIC-16

SO-8

SOT-223

SuperSOT

-6

Summary of content (4 pages)

PAGE 1
August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
PAGE 2
Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS Gate Threshold Voltage Temp.
PAGE 3
Typical Electrical Characteristics -1.6 VGS = -4.5V -3.5 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0 -1.25 -2.7 -2.5 -1 -0.75 -2.0 -0.5 -0.25 -1.5 I D , DRAIN-SOURCE CURRENT (A) -1.5 0 0 -1 -2 -3 -4 V -1.4 GS = -2.0 V -1.2 -2.5 -2.7 -1 -3.0 -3.5 -4.0 -0.8 -4.5 -0.6 -5 0 -0.2 V DS , DRAIN-SOURCE VOLTAGE (V) V GS = -2.7V 1.2 1 0.8 -25 25°C R DS(on) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -0.
PAGE 4
Typical Electrical And Thermal Characteristics 150 VDS = 5V I D = -0.25A 100 10V 15V 4 Ciss CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 5 3 2 1 50 Coss 20 Crss f = 1 MHz 10 V GS = 0 V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 5 0.1 Q g , GATE CHARGE (nC) 2 S( ON I )L M IT 10 0m 25 s 1s 10 0.1 DC VGS = -2.7V SINGLE PULSE R θJA = 357 °C/W TA = 25°C SINGLE PULSE R θJA =357° C/W TA = 25°C 4 POWER (W) RD s 3 2 1 0 0.001 0.2 0.5 -V DS 1 2 5 10 20 0.01 35 0.