Datasheet

ManualsBrandsFairchild ManualsDiscrete SemiconductorsIGBT TO-247 600 V 30 A

HGTG30N60B3D, HGT4E30N60B3DS

60A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D, and HGT4E30N60B3DS are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

C and 150

C. The IGBT used is the development type

TA49170. The diode used in anti-parallel with the IGBT is the

development type TA49053.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49172.

Features

• 60A, 600V, T

=25

• 600V Switching SOA Capability

• TypicalFallTime.................90nsatT

=150

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

TO-268AA

Symbol

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60B3D TO-247 G30N60B3D

HGT4E30N60B3DS TO-268AA G30N60B3D

NOTE: When ordering, use the entire part number.

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet December 2001

Summary of content (8 pages)

PAGE 1
HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 E The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
PAGE 2
HGTG30N60B3D, HGT4E30N60B3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60B3D, HGT4E30N60B3DS UNITS 600 V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 60 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
HGTG30N60B3D, HGT4E30N60B3DS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS - 32 - ns - 24 - ns - 275 320 ns - 90 150 ns - 1
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HGTG30N60B3D, HGT4E30N60B3DS TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 480V 100 10 TC f = 0.05 / (td(OFF)I + td(ON)I) 1 MAX1 75oC fMAX2 = (PD - PC) / (EON + EOFF ) 75oC PC = CONDUCTION DISSIPATION 110oC (DUTY FACTOR = 50%) 110oC RθJC = 0.6oC/W, SEE NOTES 0.
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HGTG30N60B3D, HGT4E30N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 250 55 RG = 3Ω, L = 1mH, VCE = 480V TJ = 25 oC, TJ = 150oC, VGE = 10V 50 200 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 3Ω, L = 1mH, VCE = 480V 45 TJ = 25oC, TJ = 150 oC, VGE = 10V 40 35 TJ = 25oC, TJ = 150 oC, VGE = 15V 150 100 50 30 TJ = 25 oC, TJ = 150oC, VGE = 15V 0 10 25 10 20 30 50 40 60 FIGURE 9.
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HGTG30N60B3D, HGT4E30N60B3DS Typical Performance Curves Unless Otherwise Specified (Continued) 10 FREQUENCY = 1MHz C, CAPACITANCE (nF) 8 CIES 6 4 COES 2 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 10 0 0.50 0.20 10-1 0.10 0.05 0.02 t1 0.
PAGE 7
HGTG30N60B3D, HGT4E30N60B3DS Test Circuit and Waveforms HGTG30N60B3D 90% 10% VGE EON EOFF L = 1mH VCE RG = 3Ω 90% + - ICE VDD = 480V FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT 10% td(OFF)I tfI trI td(ON)I FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices.
PAGE 8
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