Datasheet
©2001 Fairchild Semiconductor Corporation HGTG30N60B3D, HGT4E30N60B3DS Rev. B1
Absolute Maximum Ratings T
C
=25
o
C, Unless Otherwise Specified
HGTG30N60B3D,
HGT4E30N60B3DS UNITS
CollectortoEmitterVoltage..............................................BV
CES
600 V
Collector Current Continuous
At T
C
=25
o
C.........................................................I
C25
60 A
At T
C
=110
o
C .......................................................I
C110
30 A
Average Diode Forward Current at 110
o
C.................................I
EC(AVG)
25 A
CollectorCurrentPulsed(Note1)...........................................I
CM
220 A
GatetoEmitterVoltageContinuous.........................................V
GES
±20 V
GatetoEmitterVoltagePulsed........................................... V
GEM
±30 V
Switching Safe Operating Area at T
J
=150
o
C(Figure2)....................... SSOA 60Aat600V
Power Dissipation Total at T
C
=25
o
C.........................................P
D
208 W
Power Dissipation Derating T
C
>25
o
C.......................................... 1.67 W/
o
C
OperatingandStorageJunctionTemperatureRange........................T
J
,T
STG
-55to150
o
C
MaximumLeadTemperatureforSoldering..................................... T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
=12V..............................t
SC
4 µs
Short Circuit Withstand Time (Note 2) at V
GE
=10V..............................t
SC
10 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
=360V,T
J
= 125
o
C, R
G
=3Ω.
Electrical Specifications T
C
=25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
=250µA, V
GE
=0V 600 - - V
Collector to Emitter Leakage Current I
CES
V
CE
=BV
CES
T
C
=25
o
C - - 250 µA
T
C
=150
o
C--3mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
=I
C110
,
V
GE
=15V
T
C
=25
o
C - 1.45 1.9 V
T
C
=150
o
C-1.72.1V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
=250µA, V
CE
=V
GE
4.2 5 6 V
Gate to Emitter Leakage Current I
GES
V
GE
= ±20V - - ±250 nA
Switching SOA SSOA T
J
=150
o
C, R
G
=3Ω,
V
GE
=15V,L=100µH
V
CE (PK)
= 480V 200 - - A
V
CE (PK)
=600V 60 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
=I
C110
,V
CE
=0.5BV
CES
-7.2 - V
On-State Gate Charge Q
G(ON)
I
C
=I
C110
,
V
CE
=0.5BV
CES
V
GE
= 15V - 170 190 nC
V
GE
= 20V - 230 250 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
=25
o
C,
I
CE
=I
C110
,
V
CE
=0.8BV
CES
,
V
GE
=15V,
R
G
=3Ω,
L=1mH,
Test Circuit (Figure 19)
-36 - ns
Current Rise Time t
rI
-25 - ns
Current Turn-Off Delay Time t
d(OFF)I
-137 - ns
Current Fall Time t
fI
-58 - ns
Turn-On Energy E
ON
- 550 800 µJ
Turn-Off Energy (Note 3) E
OFF
- 680 900 µJ
HGTG30N60B3D, HGT4E30N60B3DS